Compact Model for Multiple Independent Gates Ambipolar Devices

The model presented is a charge-based model that assures the continuity of the current and the analytical derivability of charges to obtain the parasitic capacitances. It has been conceived to support the multiple independent gates, typical of nano-array structures, where each gate controls the charge in the channel. Charge conservation implies constant current in the different section of the multiple gate nanowire FET, making possible the development of a compact model for an arbitrary number of gates. The model has been used to describe different structures (i.e. number of gates, dimension of the single transistor and ranges of applied voltages) under static conditions and the results have been verified on Silvaco TCAD simulations. The modeling approach and the attained results for some cases of study will be presented and discusse

Simulation of a molecular QCA wire

Molecular Quantum Dot Cellular Automata (MQCA) are among the most promising emerging technologies for the expected theoretical operating frequencies (THz), the high device densities and the non-cryogenic working temperature. In this work we simulated a molecular QCA wire, based on a molecule synthesized ad-hoc for this technology. The results discussed are obtained by means of iterative steps of ab-initio calculation

An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

A Model for the Evaluation of Monostable Molecule Signal Energy in Molecular Field-Coupled Nanocomputing

Molecular Field-Coupled Nanocomputing (FCN) is a computational paradigm promising high-frequency information elaboration at ambient temperature. This work proposes a model to evaluate the signal energy involved in propagating and elaborating the information. It splits the evaluation into several energy contributions calculated with closed-form expressions without computationally expensive calculation. The essential features of the 1,4-diallylbutane cation are evaluated with Density Functional Theory (DFT) and used in the model to evaluate circuit energy. This model enables understanding the information propagation mechanism in the FCN paradigm based on monostable molecules. We use the model to verify the bistable factor theory, describing the information propagation in molecular FCN based on monostable molecules, analyzed so far only from an electrostatic standpoint. Finally, the model is integrated into the SCERPA tool and used to quantify the information encoding stability and possible memory effects. The obtained results are consistent with state-of-the-art considerations and comparable with DFT calculation

Simulation and Modeling of Silicon Based Single Electron Transistor

In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula

Fault Tolerance Analysis of a Bis-Ferrocene QCA Wire

Molecular Quantum Dot Cellular Automata (mQCA) are among the most promising emerging technologies for the expected theoretical operating frequencies (THz), the high device densities and the non-cryogenic working temperature. In this paper, we performed an analysis of the possible fabrication defects of a molecular QCA wire built with ad-hoc synthesized bis-ferrocene molecules. We then evaluated the fault tolerance of a real QCA device and assessed its performance in non-ideal conditions, by defining a new methodology for the fault analysis in the mQCA technolog